[반도체 온에어] 삼성전자, 42nm 적층 트랜지스터 시대 열었다

Samsung has successfully extended its proven 3D stacking technology from memory to logic semiconductors, achieving a world-record 42nm spacing with its 3D Stacked FET structure and overcoming fundamental physical limits of 2D scaling. This breakthrough promises 100% theoretical performance improvement and doubled power efficiency compared to conventional single-generation advances, fundamentally reshaping the landscape for AI and HPC chip design.